60612 tkim/12512 tkim tc-00002698/71206/41006 msim tb-00002121/12506qa msim tb-00002052 no. a0225-1/9 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 2sk4066 n-channel power mosfet 60v, 100a, 4.7m , to-262-3l/to-263-2l features ? on-resistance r ds (on)1=3.6m (typ.) ? input capacitance ciss=12500pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 100 a drain current (pulse) i dp pw 10 s, duty cycle 1% 400 a allowable power dissipation p d 1.65 w tc=25c 90 w continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7537-001 7535-001 ordering number : ena0225c 1 : gate 2 : drain 3 : source 4 : drain to-263-2l 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.75 0.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 123 4 k4066 lot no. 1 : gate 2 : drain 3 : source to-262-3l 10.0 5.3 1.27 1.47 0.8 2.54 2.54 13.08 9.2 7.9 1.2 2.4 1.75 0.9 3.0 4.5 8.0 1.3 0.5 1 2 3 1 3 2, 4 product & package information ? package : to-262-3l ? package : to-263-2l ? jeita, jedec : to-262 ? jeita, jedec : sc-83, to-263 ? minimum packing quantity : 50pcs./magazine ? minimum packing quantity : 800pcs./reel marking packing type : dl electrical connection 2SK4066-1E 2sk4066-dl-1e dl
2sk4066 no. a0225-2/9 continued from preceding page. parameter symbol conditions ratings unit channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 850 mj avalanche current *2 i av 70 a note : * 1 v dd =30v, l=200 h, i av =70a (fig.1) * 2 l 200 h, single pulse electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =50a 51 85 s static drain-to-source on-state resistance r ds (on)1 i d =50a, v gs =10v 3.6 4.7 m r ds (on)2 i d =50a, v gs =4v 4.7 6.6 m input capacitance ciss v ds =20v, f=1mhz 12500 pf output capacitance coss 1200 pf reverse transfer capacitance crss 950 pf turn-on delay time t d (on) see fig.2 80 ns rise time t r 630 ns turn-off delay time t d (off) 860 ns fall time t f 750 ns total gate charge qg v ds =30v, v gs =10v, i d =100a 220 nc gate-to-source charge qgs 31 nc gate-to-drain ?miller? charge qgd 55 nc diode forward voltage v sd i s =100a, v gs =0v 0.9 1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2SK4066-1E to-262-3l 50pcs./magazine pb free 2sk4066-dl-1e to-263-2l 800pcs./reel 50 10v 0v 50 v dd l 2sk4066 pw=10 s d.c. 1% p. g 50 g s d i d =50a r l =0.6 v dd =30v v out 2sk4066 v in 10v 0v v in stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sk4066 no. a0225-3/9 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a it10467 --25 c 25 c tc=75 c 0.2 0.6 0.4 0.8 1.0 1.2 1.4 2.0 1.6 1.8 0 0 20 40 200 120 100 80 160 140 180 60 it10468 1.5 2.0 2.5 4.0 3.0 3.5 1.0 0 20 60 40 200 140 120 100 160 180 80 tc=25 c v gs =3v 10v 4v 6v v ds =10v 8v r ds (on) -- v gs r ds (on) -- tc ciss, coss, crss -- v ds i s -- v sd | y fs | -- i d sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c forward transfer admittance, | y fs | -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a it10470 --50 --25 150 030 10 15 20 25 5 1k 3 5 2 it10474 it10472 it10471 0.1 1.0 23 57 3 1.0 10 7 1.5 1.2 0.6 0.3 0.9 0 0.01 0.1 5 7 3 2 2 1.0 5 7 3 2 10 5 7 3 2 100 5 7 3 2 3 7 5 2 2 3 2 3 100 7 5 10k 2 2 10 357 2 100 323 57 0 25 50 75 100 125 3 5 7 7 i d =50a tc=75 c 25 c --25 c tc= --25 c 25 c 75 c v ds =10v tc=75 c 25 c --25 c v gs =0v ciss crss it10473 0.1 7 1.0 23 5 2 7 10 35 2 100 1000 3 2 3 5 2 5 7 7 t d (off) t d (on) v dd =30v v gs =10v f=1mhz t r it10469 13 2 4567 10 89 0 0 1 2 15 9 7 5 11 3 10 8 6 12 13 14 4 0 1 2 10 6 5 4 8 7 9 3 t f v gs =4v, i d =50a v gs =10v, i d =50a coss 7 100 35
2sk4066 no. a0225-4/9 i dp =400a i d =100a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 10 s 10 s it10960 0.1 1.0 2 3 5 7 2 10 3 5 7 2 0.1 1.0 23 57 2 10 357 2 100 357 100 3 5 7 2 1000 3 5 7 it10475 0 50 200 150 250 100 0 2 4 6 1 3 5 8 7 9 10 v ds =30v i d =100a a s o v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a tc=25 c single pulse 0 0 20 40 60 80 100 120 2.0 140 160 1.65 1.5 1.0 0.5 it10482 0 0 20 40 60 80 100 120 100 140 160 40 60 50 70 80 90 30 20 10 it10483 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w
2sk4066 no. a0225-5/9 taping speci cation 2sk4066-dl-1e
2sk4066 no. a0225-6/9 outline drawing land pattern example 2sk4066-dl-1e mass (g) unit 1.5 * for reference mm unit: mm
2sk4066 no. a0225-7/9 magazine speci cation 2SK4066-1E
2sk4066 no. a0225-8/9 outline drawing 2SK4066-1E mass (g) unit 1.6 * for reference mm
2sk4066 ps no. a0225-9/9 note on usage : since the 2sk4066 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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